47-77 GHz and 70-155 GHz LNAs in SiGe BiCMOS Technologies
نویسندگان
چکیده
This paper presents two broadband LNAs covering the frequency ranges from 47 to 77 GHz and 73 to 140 GHz, with peak gain above 20 dB. A proposed Ttype matching topology has been adopted in both circuits to achieve the wide bandwidth. While the V-band LNA achieves the design target, the bandwidth in W/F-band is reduced to 73-140 GHz, with a mid-band gain of 20 dB. The measured NF is below 7.2 dB from 50 to 75 GHz for the V-band LNA and below 7 dB from 78 to 110 GHz for the W/F-band LNA. The circuits are fabricated in 0.25 μm and 0.13 μm SiGe BiCMOS technologies, respectively. Both LNAs are differential circuits and consume 52/54 mW DC power. To the authors’ knowledge, both LNAs achieve the widest bandwidth in the corresponding frequency band.
منابع مشابه
SiGe BiCMOS AND CMOS TRANSCEIVER BLOCKS FOR AUTOMOTIVE RADAR AND IMAGING APPLICATIONS IN THE 80-160 GHz RANGE
This paper examines the suitability of advanced SiGe BiCMOS and sub 65nm CMOS technologies for applications beyond 80GHz. System architectures are discussed along with the detailed comparison of VCOs, LNAs, PAs and static frequency dividers fabricated in CMOS and SiGe BiCMOS, as required for automotive cruise-control radar, high data-rate radio, and active and passive imaging in the 80GHz to 16...
متن کاملA Single-Chip Dual-Band 22–29-GHz/77–81-GHz BiCMOS Transceiver for Automotive Radars
Integration of multi-mode multi-band transceivers on a single chip will enable low-cost millimeter-wave systems for next-generation automotive radar sensors. The first dual-band millimeter-wave transceiver operating in the 22–29-GHz and 77–81-GHz short-range automotive radar bands is designed and implemented in 0.18m SiGe BiCMOS technology with of 200/180 GHz. The transceiver chip includes a du...
متن کاملA 20–32-GHz Wideband Mixer With 12-GHz IF bandwidth in 0.18- m SiGe Process
This paper presents a 20–32-GHz wideband BiCMOS mixer with an IF bandwidth of 12 GHz. The mixer utilizes an inductive peaking technique to extend the bandwidth of the downconverted IF signal. To our knowledge, the proposed mixer achieves the widest IF bandwidth using silicon-based technologies in -band. Analytical expressions for the conversion gain and output noise of the proposed mixer are pr...
متن کاملOptimization of SiGe HBT VCOs for Wireless Applications
This paper describes the optimization of phase noise performance in fully integrated SiGe HBT differential LC-tuned voltage-controlled oscillators (VCOs) for wireless applications. An accnrate expression for phase noise in SiGe HBT LC-tuned VCOs is presented which takes the nonlinear operation of the oscillator into account. Design methods are shown which minimize the different sources of phase...
متن کاملSiGe HBT wideband amplifier for millimeter wave applications
A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz f t SiGe BiCMOS technology. Die size was 0.7×0.73 mm. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the hi...
متن کامل