47-77 GHz and 70-155 GHz LNAs in SiGe BiCMOS Technologies

نویسندگان

  • Gang Liu
  • Hermann Schumacher
چکیده

This paper presents two broadband LNAs covering the frequency ranges from 47 to 77 GHz and 73 to 140 GHz, with peak gain above 20 dB. A proposed Ttype matching topology has been adopted in both circuits to achieve the wide bandwidth. While the V-band LNA achieves the design target, the bandwidth in W/F-band is reduced to 73-140 GHz, with a mid-band gain of 20 dB. The measured NF is below 7.2 dB from 50 to 75 GHz for the V-band LNA and below 7 dB from 78 to 110 GHz for the W/F-band LNA. The circuits are fabricated in 0.25 μm and 0.13 μm SiGe BiCMOS technologies, respectively. Both LNAs are differential circuits and consume 52/54 mW DC power. To the authors’ knowledge, both LNAs achieve the widest bandwidth in the corresponding frequency band.

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تاریخ انتشار 2012